Measurement of Secondary Electron Emission Coefficient of Plane Target in Plasma Immersion Ion Implantation
نویسندگان
چکیده
منابع مشابه
Semiconductor applications of plasma immersion ion implantation
Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
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Plasma immersion ion implantation ~PIII! is an established technique in some niche microelectronics applications, such as synthesis of silicon on insulator. In other applications, such as shallow junction formation by plasma doping, trench doping, and others, PIII possesses unique advantages over conventional techniques. In the last few years, there have been significant breakthroughs in these ...
متن کاملNumerical Simulation of Plasma-Immersion Ion Implantation on Insulators
In plasma immersion ion implantation (PIII), a high voltage pulsed bias is applied to a substrate to accelerate ions from a surrounding plasma for implantation beneath the surface. This technique is often used to modify the surface properties of materials. For example, the intrinsic stress of thin films can be lowered, resulting in improved adhesion. For conducting samples, the energy of the in...
متن کاملSimulation of BF3 Plasma Immersion Ion Implantation into Silicon
Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 2004
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms.124.223